Spectroscopic analysis of ultra-wide bandgap semiconductors
Gatan instrument used
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Background
Ultra-wide bandgap (UWBG) materials such as Al(Ga)N, Ga2O3, BN, and diamond offer significant benefits for high-power and high-frequency electronic and optoelectronic devices that operate at deep ultraviolet (UV) wavelengths. Furthermore, many UWBG materials improve operation in extreme environments where radiation damage or high temperatures obviate other materials from consideration.
Commercially viable devices require the development of high-quality, low defect materials. However, the UWBG (>3.4 eV) precludes the use of conventional photoluminescence setups commonly employed in process development as these materials are transparent at the laser-wavelengths commonly employed. Consequently, an alternative spectroscopic technique is required.
